Dynamic surface temperature measurements in SiC epitaxial power diodes performed under single-pulse self-heating conditions

摘要

Semiconductor devices development, design and optimization require the use of computer simulation tools able to predict the entire device safe operating area (SOA), something that it is not always possible due to limitations in some of the physical models in predicting certain properties of device operation under extreme conditions (i.e. high carrier injection levels and high temperature). In order to improve our understanding of device operation under these extreme conditions experimental data of the dynamic IV characteristics and temperature time evolution and space distribution are required. The experimental data obtained are then used in the development of improved physical models and simulation tools. In this work, dynamic surface temperature measurements as a function of current pulse peak density and length were performed on SiC-PiN epitaxial power diodes. The measurements were carried out using an infrared (IR) microscope developed in our lab capable of measuring space and time surface temperature distributions in semiconductor devices operating under self-heating conditions [Solid State Electron 2001;45(12):2057]. The minimum detected spot size is 15 μm, while the signal raising time is detector limited to about 1 μs. The lowest detectable temperature increment is at least 10℃ over room temperature. Using this instrument, dynamic thermal phenomena in 4.5 kV SiC-PiN epitaxial power diodes [Mater Sci Forum 2001;353-356:727] subjected to 1 ms long 100-6000 A/cm~2 and 0.1-5 ms long 3000 A/cm~2 current pulses have been studied. The possibility of obtaining dynamic surface temperature information from SiC electronic devices operating under self-heating conditions with time constants in the order of ms is demonstrated.