Requirements for ultra-thin-film devices and new materials for the CMOS roadmap

摘要

For the first time various devices architectures (bulk, SOI and SON) and process modules (metal gate, strained-Si channel) are compared in a consistent way using the same analytical tool. This analysis shows on one hand that the conventional bulk cannot match the requirements throughout the entire ITRS'01 roadmap, but on the other hand it gives clear guidelines on device architectures permitting to do so. In other words, this paper puts forward a device architecture roadmap and shows precisely which architectures, modules and materials will be needed at a given CMOS node. This message analysis may be of importance for semiconductor manufacturers, equipment makers and SOI wafer providers.