A quasi-analytical breakdown voltage model in four-layer punch-through TVS devices

摘要

A quasi-analytical model addressed to predict the breakdown voltage in four-layer transient voltage suppressor (TVS) diodes based on the punch-through effect is reported in this paper. For breakdown voltage in excess of 1 V, a closed form expression is derived. In addition, the three-layer TVS diode can also be described with the developed model. Finally, results obtained from the model are in good agreement with simulation and experimental data.