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Nanoscale FinFET simulation: A quasi-3D quantum mechanical model using NEGf

机译:纳米级FinFET模拟:使用NEGf的准3D量子力学模型

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摘要

In this paper, a numerical simulation of FinFET is carried out. This computational model is also applicable to nanowires. The non-equilibrium Green's function (NEGF) is used to handle the quantum transport along the channel, and 2-D Schroedinger equation is solved at the channel cross-section to obtain the electron density profile. With the 3-D Poisson's equation solved self-consis-tently, the model provides insights into the performance of FinFETs with ultra-small channel cross-dimension.
机译:本文对FinFET进行了数值模拟。该计算模型也适用于纳米线。使用非平衡格林函数(NEGF)处理沿通道的量子传输,并在通道截面处求解二维Schroedinger方程以获得电子密度分布。借助3-D泊松方程可自洽地求解,该模型可以洞察具有超小沟道交叉尺寸的FinFET的性能。

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