A TCAD methodology for high-speed photodetectors

摘要

Technology computer aided design (TCAD) of semiconductor devices exhibits the advantages of reduced development costs and development time. In this worka TCAD methodology has been developed for high-speed photodetectors. The calibration procedure for fixing the free parameters in the physical models employed in the simulation has been illustrated for a commercially available InGaAs/InP p-i-n photodetector. This approach has been illustrated using a specific example where the task was to optimize the absorption layer thickness of a novel photodetector structure.