On the great potential of non-doped MOSFETs for analog applications in partially-depleted SOI CMOS process

摘要

In this paper we discuss the potential applicability of SOI MOS transistors with non-doped (or intrinsic) channels for analog applications. We present the comparison of doped and intrinsic nMOSFETs in terms of parameters of the importance for analog designers and demonstrate that intrinsic devices are very prom ising for low-voltage, low-power analog applications, as they feature better threshold voltage control and predictability, higher maximum transconductance, driving current and attenuation of floating-body effects. We show that the use of non-doped devices gives the opportunity to create fully-depleted (FD) devices within a partially-depleted (PD) process. A new effect occurring in such intrinsic devices, which we call "PD-to-FD jump", is described for the first time.