Transient enhanced diffusion of B at low temperatures under extrinsic conditions

摘要

Transient enhanced diffusion of B in silicon is modelled at temperatures down to 500℃, using a simplified model of self-interstitial clusters to describe the time evolution of the self-interstitial supersaturation, S. The model is highly predictive, providing an accurate description of diffusion both in the peak and tail regions of B marker layers, over a wide range of annealing conditions. The model is well adapted for implementation into existing 2D commercial simulation tools. Fundamental parameters of atomic-stale B diffusion were extracted for the first time at T = 500℃, under both intrinsic and extrinsic conditions.