InAlAs/InGaAs doped channel heterostructure for high-linearity, high-temperature and high-breakdown operations

摘要

High-linearity In_(0.52)Al_(0.48)As/In_(0.53)Ga_(0.47)As doped channel transistor (DCFET) was successfully fabricated by low-pressure metal organic chemical vapor deposition (LP-MOCVD). Due to the presence of doped InGaAs channel, undoped InAlAs barrier layer and low-temperature growth InAlAs buffer layer, good carrier confinement, improved breakdown and a wide transconductance operation regime are expected. Experimentally, for a 1.5 x 100 μm~2 device, high-transconductance of 291 mS/mm, high-gate-drain breakdown voltage of 20.2 V, high-turn-on voltage of 0.78 V, wide operation regime of 288 mA/mm as well as significantly improved gate voltage swing of 1.05 V are achieved. Additionally, the studied device shows good temperature characteristics. The performance indicates the promise for high-power and high-temperature applications.