Sapphire substrate-transferred nitride-based light-emitting diode fabricated by sapphire wet etching technique

摘要

In order to investigate the influence of a sapphire substrate on the GaN-based light-emitting diode (LED) performance, sapphire-etched vertical-electrode nitride-based semiconductor (SEVENS) LEDs are fabricated by a sapphire wet etching technique. The performance of SEVENS-LEDs is substantially dependent on the presence of sapphire substrate. The light-output power of a SEVENS-LED with a microroughened surface structure and without a sapphire substrate (type-A) is not saturated up to a junction current as high as 300 mA, constituting a notable improvement relative to that (250 mA junction current) of SEVENS-LEDs with a 5 μm-thick sapphire substrate (type-B). The 200 mA light-output power of type-A SEVENS-LED is 1.8 times stronger than that of type-B SEVENS-LED. With increasing junction current, the variation of the peak wavelength is less for the type-A SEVENS-LED than for the type-B SEVENS-LED. These results imply that even a thin sapphire substrate on the SEVENS-LED affects the heat dissipation characteristic at high injection levels.