Investigation of scaling of InSb MOSFETs through drift-diffusion simulation

摘要

Models needed for drift-diffusion simulation of InSb MOSFETs in commercially available simulator are presented and applied to the problem of scaling of the exclusion/extraction InSb MOSFETs. Non-parabolicity, degeneracy, mobility and Auger recombination/generation are explained and modeled. Leakage current and maximum unity current gain frequency of the exclusion/extraction MOSFET are examined and its scaling properties down to 0.15 μm are analyzed. Because of its high mobility and saturation velocity, InSb shows promise as a material for THz active devices operating at very low voltages, despite its low bandgap and resulting leakage currents.