Fabrication of high-speed and uncooled AlGaInAs ridge-waveguide laser diodes by STOP technique

摘要

In this article, we demonstrated the fabrication of high-speed 1.55-μm ridge-waveguide semiconductor laser diodes (LDs) by a called "self-terminated oxide polish (STOP)" planarization technique. This technique can effectively reduce the parasitic parameters and improve the device performance. In addition, it can also lower the cost of device fabrication. The LDs with a 4-μm ridge based on the STOP process exhibit a threshold current of 22 mA at 20℃, a light output power of 16 mW at 100 mA and 20℃, and a characteristic temperature of 80.6 K from -10 to 80℃. The device can be directly modulated at -3 dB bandwidth in excess of 11 and 14.5 GHz at 50 and 100 mA, respectively.