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On the nano-hillock formation induced by slow highly charged ions on insulator surfaces

机译:在绝缘体表面缓慢的高电荷离子诱导的纳米岗形成

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We discuss the creation of nano-sized protrusions on insulating surfaces using slow highly charged ions. This method holds the promise of forming regular structures on surfaces without inducing defects in deeper lying crystal layers. We find that only projectiles with a potential energy above a critical value are able to create hillocks. Below this threshold no surface modification is observed. This is similar to the track and hillock formation induced by swift (~GeV) heavy ions. We present a model for the conversion of potential energy stored in the projectiles into target-lattice excitations (heat) and discuss the possibility to create ordered structures using the guiding effect observed in insulating conical structures.
机译:我们讨论使用缓慢的高电荷离子在绝缘表面上创建纳米尺寸的突起。该方法有望在表面上形成规则结构,而不会在较深的晶体层中引起缺陷。我们发现,只有具有超过临界值的势能的弹丸才能制造小丘。低于该阈值,未观察到表面改性。这类似于快速(〜GeV)重离子诱导的径迹和小丘形成。我们提出了一种将存储在弹丸中的势能转换为目标晶格激发(热)的模型,并讨论了使用在绝缘圆锥形结构中观察到的引导效应来创建有序结构的可能性。

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