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High aspect ratio cylindrical nanopores in silicon-on-insulator substrates

机译:绝缘体上硅衬底中的高纵横比圆柱形纳米孔

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Cylindrical solid-state nanopores with 40 nm diameter were fabricated in silicon-on-insulator substrates using standard cleanroom semiconductor processing techniques. Here we report on a fabrication sequence which consistently produced robust nanopores with control over the final diameter. The electrolyte concentration dependence of ion transport through a single nanopore was measured over the range of 0.316 mM to 1 M. Experimentally measured values follow the bulk linear behavior at high concentrations but deviate from the simple model at lower concentrations. These deviations were modeled using a surface charge conduction mechanism.
机译:使用标准的无尘室半导体加工技术,在绝缘体上硅衬底上制造了直径为40 nm的圆柱形固态纳米孔。在这里,我们报告了一个制造序列,该序列始终控制最终直径,不断产生坚固的纳米孔。在0.316 mM到1 M的范围内测量了离子通过单个纳米孔传输的电解质浓度依赖性。实验测量的值在高浓度下遵循总体线性行为,但在较低浓度下偏离简单模型。使用表面电荷传导机制对这些偏差进行建模。

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