Optoelectronic characteristics of NMOS silicon photodetector made by rapid thermal oxidation

摘要

Al/SiO_2/p-Si structure with 4 nm SiO_2 layer prepared by rapid thermal oxidation (RTO) technique at 950℃/45 s condition was used as photodetector for visible and near infrared regions. The technical steps for fabrication process of NMOS device are given. Ⅰ-Ⅴ characteristics under dark and white light illumination are measured and analyzed. Breakdown of Si NMOS photodetector occurred at V_B = 12 V bias. The quantum efficiency (QE) of photodetector has a maximum value of 54% at λ = 530 nm when the detector is biased to 4 V and is decreased to 20% at λ = 1000 nm. Neither grid gate transparent contacts nor antireflection coating have been used to enhance the QE of photodetector. Furthermore, these results are compared with published results.