Characterization and modeling of temperature-dependent barrier heights and ideality factors in GaAs Schottky diodes

摘要

A semi-analytical model for Schottky diodes with ideality factors (η) greater than 1.00 is presented with an experimental verification from n-type GaAs Schottky diodes (η = 1.00-2.47 over T = 83-323 K). Adopting a correcting ideality factor in the distribution function, an accurate modeling of temperature-sensitive variations of current-voltage characteristics and accurate extraction of Schottky barriers are obtained with a modified Richardson constant. Temperature-dependent Schottky barriers (φ_(bn) = 0.928 V|_(83K)-0.837 V|_(323K)), obtained from the semi-analytical model, are consistent with the variation of the energy bandgap with temperature which is known to be the main cause for the change of Schottky barriers.