机译:利用液相氧化InGaAs栅极的耗尽型In_(0.53)Ga_(0.47)As沟道MOSFET
Center for Distributed Sensor Networks, Gwangju Institute of Science and Technology (GIST), 1 Oryong-dong, Buk-gu, Gwangju 500-712, Republic of Korea;
liquid phase oxidation; InGaAs-oxide; InGaAs channel; MOSFET; XPS; capacitance-voltage characteristics; Ⅰ-Ⅴ characteristics; microwave characteristics; low frequency noise characteristics;
机译:IN_(0.53)GA_(0.47)的自热效果和热载流量降解为栅极 - 全面MOSFET
机译:具有ZrO_2栅极电介质的表面沟道In_(0.53)Ga_(0.47)As n-MOSFET的界面态密度,低频噪声和电子迁移率
机译:将氟掺入hfalo栅极电介质中以钝化缺陷并影响In_(0.53)Ga_(0.47)As n-MOSFET的电特性
机译:用于RF应用的耗尽模型in_(0.22)Ga_(0.22)Ga_(0.78)AS沟道MOSFET,用于RF应用的天然氧化物栅极电介质
机译:液相中InSb和InGaAs上烷硫醇盐和硫化物层的单步和两步吸附
机译:栅极长度变化对栅极优先自对准In0.53Ga0.47As MOSFET性能的影响
机译:InP / In_ {0.53} Ga_ {0.47} As界面对In_ {0.52} Al_ {0.48} As / In_ {0.53} Ga_ {0.47} As异质结构中自旋轨道相互作用的影响
机译:具有通过液相外延生长的In0.53Ga0.47as接触层的N / p Inp同质结太阳能电池