首页> 外文期刊>Solid-State Electronics >Corrigendum To 'an Analytical Channel Thermal Noise Model For Deep Sub-micron Mosfets With Short Channel Effects' [solid State Electronics 51(7) (2007) 1034-1038]
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Corrigendum To 'an Analytical Channel Thermal Noise Model For Deep Sub-micron Mosfets With Short Channel Effects' [solid State Electronics 51(7) (2007) 1034-1038]

机译:“具有短通道效应的深亚微米Mosfets的分析通道热噪声模型”的更正[固态电子技术51(7)(2007)1034-1038]

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摘要

With respect to our paper published in the July, 2007 issue of this journal, "An Analytical Channel Thermal Noise Model for Deep Sub-micron MOSFETs with Short Channel Effects" [1], there were several misprints and miscalculation found, which we would like to correct and apologize to readers for this journal.
机译:关于我们在该杂志于2007年7月发行的论文“具有短沟道效应的深亚微米MOSFET的分析沟道热噪声模型” [1],发现了一些误印和误算,我们希望为该期刊改正并向读者致歉。

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