首页> 外文期刊>Solid-State Electronics >High light output intensity of titanium dioxide textured light-emitting diodes
【24h】

High light output intensity of titanium dioxide textured light-emitting diodes

机译:二氧化钛纹理发光二极管的高光输出强度

获取原文
获取原文并翻译 | 示例
           

摘要

Higher light output intensity and wider polar radiation pattern of InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) with a different nanoscale titanium dioxide (TiO_2) textured densities film have been observed. The light output power values and external quantum efficiency of the conventional LEDs at an injection current of 20 mA are 6.34 mW and 11.7%, respectively. The light output power values and external quantum efficiency of the nanoscaled TiO_2 textured LEDs at an injection current of 20 mA are 7.55 mW and 14%, respectively. The light output intensity and power values of the nanoscaled TiO_2 textured LEDs is approximately 65% and 20% higher than that of the conventional LEDs, respectively.
机译:观察到具有不同纳米级二氧化钛(TiO_2)织构密度膜的InGaN / GaN多量子阱(MQW)发光二极管(LED)具有更高的光输出强度和更宽的极性辐射图。常规LED在20 mA注入电流下的光输出功率值和外部量子效率分别为6.34 mW和11.7%。在注入电流为20 mA时,纳米级TiO_2纹理化LED的光输出功率值和外部量子效率分别为7.55 mW和14%。纳米级TiO_2纹理化LED的光输出强度和功率值分别比常规LED高约65%和20%。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号