Effect of the surface texturing shapes fabricated using dry etching on the extraction efficiency of vertical light-emitting diodes

摘要

On the surfaces of GaN-based light-emitting diodes (LEDs) having an n-side-up vertical electrode structure formed by the laser lift-off, various shapes of photoresist-patterned surface textures were formed by inductively coupled plasma etching and their effect on the light emission efficiencies was investigated. By the formation of various shapes of surface textures, the light output efficiency was increased from 37% to 45% compared to that without surface textures. The increase of light output efficiency was related to the increase of sidewall scattering, the decrease of reflected loss, and the decrease of cavity wall effect that occurs for the vertical LEDs by the increase of sidewall surface area.