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A coplanar hydrogenated amorphous silicon thin-film transistor for controlling backlight brightness of liquid-crystal display

机译:用于控制液晶显示器的背光亮度的共面氢化非晶硅薄膜晶体管

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We studied a coplanar hydrogenated amorphous silicon thin-film transistor (TFT) to control the backlight brightness in liquid-crystal display (LCD). This was done by designing the inverse-staggered TFT for the switching device and the coplanar TFT to absorb the illumination from backlight. We achieved the field-effect mobility of 0.3 cm~2/V s, threshold voltage of 3.6 V, and the subthreshold voltage swing of 1.3 V/d for the coplanar TFT. The TFT showed the photocurrent of ~10~(-8) A and dark current of ~10~(-11) A in the operation region of backlight for TFT-LCD. The dynamic range was 50 dB which is good enough to control the brightness of the backlight.
机译:我们研究了共平面氢化非晶硅薄膜晶体管(TFT),以控制液晶显示器(LCD)的背光亮度。这是通过设计用于开关设备的反交错TFT和共面TFT来吸收来自背光的照明来完成的。对于共面TFT,我们实现了0.3 cm〜2 / V s的场效应迁移率,3.6 V的阈值电压和1.3 V / d的亚阈值电压摆幅。 TFT在TFT-LCD背光源的工作区域中显示出〜10〜(-8)A的光电流和〜10〜(-11)A的暗电流。动态范围为50 dB,足以控制背光的亮度。

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