Inverse staggered poly-Si thin-film transistor with non-laser crystallization of amorphous silicon

摘要

We studied the inverse staggered thin-film transistor (TFT) with non-laser crystallization of amorphous silicon (a-Si) by metal-induced crystallization through a cap layer (MICC). The inverse staggered n-channel poly-Si TFT with n~+ a-Si:H source/drain contacts exhibited a field-effect mobility of 34.8 cm~2/V s, a gate swing of 1.08 V/dec. and the minimum off-state current of < 1.0 × 10~(-12) A/μm at V_(ds) = 5 V. It is found that the MICC poly-Si can be formed on SiO_2/MoW/glass without distortion of substrate, confirmed from the analysis of the Raman spectra and the scanning electron microscopy (SEM) images of the poly-Si films.