Characterization of cadmium telluride thin films fabricated by two-source evaporation technique and Ag doping by ion exchange process

摘要

Cadmium telluride (CdTe) thin films were deposited onto scratch free transparent glass substrates by two-source evaporation technique, using Cd and Te as two different evaporants. In the next step films were heated under vacuum at 400 ℃ for 1 h and dipped in AgNO_3-H_2O solution at room temperature. These films were again heated under vacuum for 1 h at 400 ℃ to obtain maximum Ag diffusion. The samples were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), electrically i.e. DC electrical resistivity by van der Pauw method at room temperature, dark conductivity, activation energy analysis as a function of temperature by two-probe method under vacuum and optically by Lambda 900 UV/VIS/NIR spectrophotometer. The EDX results showed an increase of Ag content in the samples by increasing immersion time of the CdTe films in the solution.