Field effect transistor as ultrafast detector of modulated terahertz radiation

摘要

Theoretical analysis of the detection of modulated sub-terahertz and terahertz radiation by a short channel field effect transistor (FET) predicts a very high upper limit for modulation frequency, Ω_(max), up to 100 GHz or even higher. Even the minimal value of Ω_(max), which is reached deep below the threshold, lies in the gigahertz range, thus promising for usage of FET-based structures for ultrafast detection of modulated terahertz radiation.