Explicit compact model for symmetric double-gate MOSFETs including solutions for small-geometry effects

摘要

A physics-based compact model including short-channel effects (SCEs) is presented for undoped (or lightly doped) symmetric double-gate (DG) MOSFETs. Our approach allows an accurate description of the device behavior down to 60 nm with a simple set of equations. It is shown that the subthreshold current, the threshold voltage roll-off and the DIBL predicted by the analytical solution are in close agreement with 2-D numerical simulations performed with Atlas. The mobility degradation due to both transverse and longitudinal fields is taken into account but the channel length modulation (saturation regime) is not addressed in this paper. In order to demonstrate that the model is well-suited for circuit simulation, the results of the dynamic model based on an explicit formulation of the mobile charge density are also presented.