机译:具有高k /多晶硅栅堆叠的应变Si_(0.8)Ge_(0.2)p沟道MOSFET的1 / f噪声研究
School of Electrical, Electronic and Computer Engineering, Newcastle University, Newcastle NE1 7RU, UK;
Interuniversity Microelectronics Center (IMEC), Leuven B-3001, Belgium;
School of Electrical, Electronic and Computer Engineering, Newcastle University, Newcastle NE1 7RU, UK;
Infineon Assignee at IMEC, Leuven B-3001, Belgium;
Interuniversity Microelectronics Center (IMEC), Leuven B-3001, Belgium Electrical Engineering Department, KU Leuven, Leuven B-3001, Belgium;
School of Electrical, Electronic and Computer Engineering, Newcastle University, Newcastle NE1 7RU, UK;
strained SiGe; high-k; low frequency noise; gate leakage; interface trap density;
机译:伪非晶Si_(0.8)Ge_(0.2)p沟道MOSFET的二维分析阈值电压建模
机译:具有ALD Al_2O_3栅极电介质的Si_(0.8)Ge_(0.2)表面沟道pMOSFET中的低频噪声和库仑散射
机译:具有超薄N_2O退火的SiN栅极电介质的深亚微米应变Si_(0.85)Ge_(0.15)沟道p沟道p沟道金属氧化物半导体场效应晶体管(pMOSFET)
机译:在Si_(0.8)Ge_(0.2)/ Si衬底上外延生长的应变Si层上沉积的高k ALD HfO_2的电性能
机译:基于Hafnium的高k栅极电介质MOSFET的1 / F噪声及造型评论
机译:具有纳米堆叠的高k栅极电介质和3D鳍形结构的高性能III-V MOSFET
机译:具有不同高k栅极堆叠的si和应变si n-mOsFET的尺度研究