Electrical properties of poly-Ge on glass substrate grown by two-step solid-phase crystallization

摘要

The carrier concentration and mobility of intrinsic holes in poly-Ge films grown by solid-phase crystallization (SPC) were investigated. The two-step SPC method, consisting of low-temperature annealing (425 ℃) to obtain large grains and subsequent high-temperature annealing (500 ℃) to decrease defects, is proposed. The hole concentration remarkably decreased from 1 × 10~(18) to 5 × 10~(17)cm~3 with keeping a high-mobility (140 cm~2/Vs) after post-annealing.