机译:使用FILOX氧化改善短沟道垂直MOSFET中的亚阈值斜率
School of Electronics and Computer Science, University of Southampton, Southampton SOU 1BJ, UK;
Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3GJ, UK;
Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3GJ, UK;
School of Electronics and Computer Science, University of Southampton, Southampton SOU 1BJ, UK;
Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3GJ, UK;
School of Electronics and Computer Science, University of Southampton, Southampton SOU 1BJ, UK;
vertical MOSFETs; FILOX; frame-gate architecture; short channel effect;
机译:通过金属电极远距离还原原生III-V氧化物获得具有陡峭亚阈值斜率的In 0.53 sub> Ga 0.47 sub> As高迁移率MOSFET
机译:FILOX垂直MOSFET的电荷泵特性
机译:具有梯度沟道掺杂的垂直nMOSFET改善了热载流子和短沟道性能
机译:使用框架门架构改善RF垂直MOSFET中的亚阈值斜率
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机译:使用双层门绝缘子在GaN-on-Si垂直沟槽MOSFET中:对性能和可靠性的影响
机译:使用FILOX氧化改善短沟道垂直mOsFET中的亚阈值斜率