Phase Change Memory Cell Based On Sb_2te_3/tin/ge_2sb_2te_5 Sandwich-structure

摘要

Four nm thick TiN film was inserted between Sb_2Te_3 and Ge_2Sb_3Te_5 films in conventional doublelayer phase change memory cell. The novel sandwich-structure phase change memory cell was still able to show triple level data storage ability. Interdiffusion between Sb_2Te_3 and Ge_2Sb_2Te_5 films is suppressed by this TiN layer. Compared with conventional doublelayer phase change memory cell, smooth resistance stages with more consistent resistance magnitudes and better data endurance characteristics of all resistance states have been achieved on the sandwich-structure phase change memory cell.