Comparisons of hot-carrier degradation behavior in SOI-LIGBT and SOI-LDMOS with different stress conditions

摘要

The hot-carrier degradation behavior of the lateral insulated gate bipolar transistor on SOI substrate (SOI-LIGBT) and the lateral DMOS transistor on SOI substrate (SOI-LDMOS) with the same structure fully except for the doping type in drain area on different stress conditions is experimentally compared for the first time. For high V_(gs) and low V_(dS), the degradation in SOI-LIGBT is much more serious than the SOI-LDMOS, which can be reflected by more positive Vth shift. For low V_(gs) and high V_(ds), there is also much severer hot-carrier degradation at the early stress stage in SOI-LIGBT according to the decrease level of Ron- Experimental results have been verified by 2D TCAD numerical simulations.