机译:p-Si纳米线/ ZnO薄膜异质结二极管的制备与表征
Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering. Yonsei University, 134 Shinchon-dong, Seodaemun-gu, Seoul 120-749, Republic of Korea;
Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering. Yonsei University, 134 Shinchon-dong, Seodaemun-gu, Seoul 120-749, Republic of Korea;
Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering. Yonsei University, 134 Shinchon-dong, Seodaemun-gu, Seoul 120-749, Republic of Korea;
Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering. Yonsei University, 134 Shinchon-dong, Seodaemun-gu, Seoul 120-749, Republic of Korea;
Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering. Yonsei University, 134 Shinchon-dong, Seodaemun-gu, Seoul 120-749, Republic of Korea;
nanostructures; heterojunction diode; nanofabrication;
机译:N-ZnO纳米线/ P-Si衬底异质结二极管的制造和温度依赖性电学特性
机译:基于N-ZnO纳米线/ P-Si衬底的异质结二极管的制造:温度依赖性传输特性
机译:具有改进的有效Richardson常数的p-Si纳米线/ n-ZnO薄膜基核-壳异质结二极管
机译:Au催化剂通过气相传输方法辅助ZnO纳米线的生长对P-Si / N-ZnO异质结二极管的制备
机译:纳米结构表面的制造和表征:等离子薄膜,纳米线,纳米环和纳米通道。
机译:低成本p-ZnO / n-Si整流纳米异质结二极管:制造和电特性
机译:N-GA掺杂ZnO纳米线的生长与P-Si衬底的磁盘和它们的异质结二极管应用互连