Application of advanced 200 GHz Si-Ge HBTs for high dose radiation environments

摘要

Third generation 200 GHz silicon-germanium Heterojunction Bipolar Transistors (Si-Ge HBTs) were irradiated with high dose Co-60 gamma radiation up to 100 Mrad. Pre-radiation and post-radiation DC figures of merits were used to quantify the radiation tolerance of the different geometry devices. The different electrical characteristics like Gummel measurements, excess base current, current gain, trans-conductance, neutral base recombination, avalanche multiplication of carriers and output characteristics were studied for different doses from 100 krad to 100 Mrad of total doses. The Si-Ge HBTs showed robust ionizing radiation tolerance up to a total dose of 100 Mrad.