机译:利用硅化钯源极/漏极接触电极形成的微晶硅薄膜晶体管
Dept. of Electronic Engineering, National Taiwan University of Science and Technology, Kee-Lung Rd., 106 Taipei, Taiwan;
Dept. of Electronic Engineering, National Taiwan University of Science and Technology, Kee-Lung Rd., 106 Taipei, Taiwan;
Dept. of Electronic Engineering, Ming-Chi University of Technology, Tai-Shan, Taipei, Taiwan;
Dept. of Electronic Engineering, Ming-Chi University of Technology, Tai-Shan, Taipei, Taiwan;
Dept. of Electronic Engineering, Ming-Chi University of Technology, Tai-Shan, Taipei, Taiwan;
Dept. of Electronic Engineering, National Taiwan University of Science and Technology, Kee-Lung Rd., 106 Taipei, Taiwan;
microcrystalline-si thin-film transistor; source/drain contact electrode; self-aligned palladium silicide;
机译:使用自对准钴和硅化镍源极和漏极触点的多晶硅薄膜晶体管
机译:顶接触式有机薄膜晶体管的接触电阻随金源/漏电极沉积速率的变化
机译:通过形成AZO / IGZO异质结源极/漏极触点来增强a-IGZO薄膜晶体管的性能
机译:具有旋涂锌氧化锡有源层和氧化铟锌源/漏电极的固溶处理氧化物薄膜晶体管
机译:硅化铂源漏场效应晶体管的物理技术
机译:源/漏电极对氧化硅锡薄膜晶体管电性能的影响
机译:肖特基势垒薄膜晶体管(SBTFT),具有硅化源/漏极和现场诱导的排水延伸