机译:用纳米线矩阵对III / V晶体管进行建模和优化
Dept. Electrical and Information Technologies. Lund University, Box 118, S-221 00 Lund, Sweden;
Dept. Electrical and Information Technologies. Lund University, Box 118, S-221 00 Lund, Sweden;
Dept. Electrical and Information Technologies. Lund University, Box 118, S-221 00 Lund, Sweden;
Dept. Electrical and Information Technologies. Lund University, Box 118, S-221 00 Lund, Sweden;
nanowire; field-effect transistor; ring-oscillator; InAs; wrap-gate;
机译:III-V型全栅栅极晶体管中时空传热的3D建模可准确估算和优化纳米线温度
机译:纳米线晶体管:通过表面装饰操纵III-V纳米线晶体管性能,金属氧化物纳米粒子(ADV。母体。界面12/2017)
机译:III–V纳米线晶体管的分析门电容建模
机译:III-V圆柱纳米线晶体管的计算有效分析电荷模型
机译:III-V纳米线晶体管和隧穿晶体管的建模,设计和分析
机译:用于纳米线场效应晶体管建模的非弹性相互作用的量子处理
机译:基于硅纳米线晶体管的4T静态随机存取存储单元的电阻负载优化