机译:具有衬底高低结的Gd_2O_3纳米晶体存储器的改进特性
Department of Electronic Engineering, Chang Cung University, Kweishan 333, Taoyuan, Taiwan;
Department of Electronic Engineering, Chang Cung University, Kweishan 333, Taoyuan, Taiwan;
Department of Electronic Engineering, Chang Cung University, Kweishan 333, Taoyuan, Taiwan;
Department of Electronic Engineering, Chang Cung University, Kweishan 333, Taoyuan, Taiwan;
Institute of Nuclear Energy Research, Atomic Energy Council, Longtan 325, Taoyuan, Taiwan;
gadolinium oxide nanocrystal (Gd_2O_3-NC); Non-volatile memory (NVM); high-low junction; band-to-band tunneling (BTBT);
机译:通过使用双层ZrO_2纳米晶体和插入的Al_2O_3改善了电荷陷阱存储器的存储特性
机译:具有改进性能的Si-纳米晶体存储器件的新型结辅助编程方案
机译:云母衬底上基于Pd / BTO / LSMO隧道结的柔性电阻存储器的特性研究
机译:具有双嵌入式AU和GD_2O_3纳米晶体的多级超快速和无干扰闪存
机译:通过增强纤维素纳米晶体(CNC)的分散性改善基于聚乳酸(PLA)的纳米复合材料的性能特征
机译:减少氧空位的HfO2阻挡层改善了Au纳米晶体存储器的电荷存储特性
机译:Si83Ge17 / Si衬底上的纳米银嵌入HfAlOx薄膜的存储特性和隧穿机理
机译:基于超支化半导体纳米晶的分层结太阳能电池。