机译:使用多个异质界面的AlGaN / GaN高电子迁移率晶体管的导通电压工程和增强模式操作
College of Nanoscale Science and Engineering, University at Albany, Albany, NY 12203, USA;
rnCollege of Nanoscale Science and Engineering, University at Albany, Albany, NY 12203, USA;
rnCollege of Nanoscale Science and Engineering, University at Albany, Albany, NY 12203, USA;
rnElectrical and Computer Engineering Department, Ohio State University, OH 43210, USA;
General Electric, Global Research Center, Niskayuna, NY 12309, USA;
GaN; HEMT; MOCVD; enhancement mode;
机译:具有低导通电阻和高击穿电压的增强型AlGaN / AlN / GaN高电子迁移率晶体管
机译:低碳掺杂GaN层中多种缺陷状态及其与AlGaN / GaN高电子迁移率晶体管工作相关性的研究
机译:具有覆盖层工程的单片集成增强/耗尽模式AlGaN / GaN高电子迁移率晶体管
机译:通过背面质子辐照增强AlGaN / GaN高电子迁移率晶体管截止态漏极击穿电压
机译:在AlGaN / GaN高电子迁移率晶体管上进行等离子增强化学气相沉积的氮化硅钝化的热稳定性。
机译:AlGaN / GaN高电子迁移率氟处理和凹槽通过氟处理和凹陷栅极充电效果
机译:AlGaN / GaN高电子迁移晶体管中击穿电压增强的蜿蜒栅极边缘