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Turn-on voltage engineering and enhancement mode operation of AlGaN/GaN high electron mobility transistor using multiple heterointerfaces

机译:使用多个异质界面的AlGaN / GaN高电子迁移率晶体管的导通电压工程和增强模式操作

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摘要

A novel device design for enhancement mode operation of Ill-nitride high electron mobility transistor (HEMT) structure has been proposed and demonstrated. The proposed HEMT device structure consists of a multi-heterojunction (SiO_2/Al_xGa_(1-x)N/GaN/Al_yCa_(1-y)N) design in contrast to a single AlGaN/GaN het-erojunction commonly used in conventional IH-nitride HEMT designs. Normally OFF operation of the proposed HEMT design is expected to take place for thicker GaN and the top Al_xGa_(1-x)N layers than previously allowed. The effects of design parameters on the value of the device turn ON voltage have been studied extensively using simulations. Various device structures have been developed based on the simulations results and epitaxially grown by MOCVD. I-V measurements support the effects of design parameters on the turn ON voltage predicted by the simulations and have confirmed the enhancement mode operation.
机译:已经提出并证明了用于III族氮化物高电子迁移率晶体管(HEMT)结构的增强模式操作的新颖器件设计。与传统IH-常使用的单个AlGaN / GaN异质结相比,拟议的HEMT器件结构由多异质结(SiO_2 / Al_xGa_(1-x)N / GaN / Al_yCa_(1-y)N)设计组成氮化物HEMT设计。通常,对于比以前允许的更厚的GaN和顶层Al_xGa_(1-x)N层,预计将进行建议的HEMT设计的OFF操作。设计仿真已广泛研究了设计参数对器件导通电压值的影响。基于仿真结果已经开发出各种器件结构,并通过MOCVD外延生长。 I-V测量支持设计参数对仿真预测的开启电压的影响,并已确认增强模式操作。

著录项

  • 来源
    《Solid-State Electronics》 |2010年第11期|p.1291-1294|共4页
  • 作者单位

    College of Nanoscale Science and Engineering, University at Albany, Albany, NY 12203, USA;

    rnCollege of Nanoscale Science and Engineering, University at Albany, Albany, NY 12203, USA;

    rnCollege of Nanoscale Science and Engineering, University at Albany, Albany, NY 12203, USA;

    rnElectrical and Computer Engineering Department, Ohio State University, OH 43210, USA;

    General Electric, Global Research Center, Niskayuna, NY 12309, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    GaN; HEMT; MOCVD; enhancement mode;

    机译:氮化镓;HEMT;MOCVD;增强时尚;
  • 入库时间 2022-08-18 01:34:56

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