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Unified large and small signal non-quasi-static model for long channel symmetric DG MOSFET

机译:长通道对称DG MOSFET的统一大,小信号非准静态模型

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摘要

We propose a unified model for large signal and small signal non-quasi-static analysis of long channel symmetric double gate MOSFET. The model is physics based and relies only on the very basic approximation needed for a charge-based model. It is based on the EKV formalism [Enz C, Vittoz EA. Charge based MOS transistor modeling. Wiley; 2006] and is valid in all regions of operation and thus suitable for RF circuit design. Proposed model is verified with professional numerical device simulator and excellent agreement is found.
机译:我们为长通道对称双栅极MOSFET的大信号和小信号非准静态分析提出了一个统一模型。该模型基于物理学,并且仅依赖于基于电荷的模型所需的非常基本的近似。它基于EKV形式主义[Enz C,Vittoz EA。基于电荷的MOS晶体管建模。威利; [2006],并且在所有操作区域均有效,因此适用于RF电路设计。通过专业的数值设备模拟器对提出的模型进行了验证,并找到了很好的协议。

著录项

  • 来源
    《Solid-State Electronics》 |2010年第11期|p.1421-1429|共9页
  • 作者单位

    Nanoscale Device Research Laboratory, Centre for Electronics Design and Technology, Indian Institute of Science, Bangalore 560 012, India;

    rnIntel Corporation, Wllsboro, USA;

    rnNanoscale Device Research Laboratory, Centre for Electronics Design and Technology, Indian Institute of Science, Bangalore 560 012, India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    non-quasi-static (NQS); double gate (DC); urge signal; small signal; compact modeling;

    机译:非准静态(NQS);双闸(DC);催促信号;小信号紧凑造型;
  • 入库时间 2022-08-18 01:34:55

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