机译:铟离子注入法分析ZnO薄膜晶体管的亚阈值光泄漏电流
Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo-Ku, Kyoto 615-8510, Japan Photonics and Electronics Science and Engineering Center, Kyoto University, Rohm Plaza, Katsura, Nishikyo-ku, Kyoto 615-8520, Japan;
rnDepartment of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo-Ku, Kyoto 615-8510, Japan;
rnResearch Institute for Nanodevices, Kochi University of Technology, 185, Miyanokuchi, Tosayamada-cho, Kami, Kochi 782-8502, Japan;
rnResearch Institute for Nanodevices, Kochi University of Technology, 185, Miyanokuchi, Tosayamada-cho, Kami, Kochi 782-8502, Japan;
rnResearch Institute for Nanodevices, Kochi University of Technology, 185, Miyanokuchi, Tosayamada-cho, Kami, Kochi 782-8502, Japan;
rnResearch Institute for Nanodevices, Kochi University of Technology, 185, Miyanokuchi, Tosayamada-cho, Kami, Kochi 782-8502, Japan;
ZnO; photosensitivity; implantation;
机译:可见光辐射下不同氧分压下形成的具有ZnO沟道的薄膜晶体管的漏光电流
机译:具有双栅极结构的ZnO薄膜晶体管中的漏光电流的减小
机译:a-InGaZnO薄膜晶体管中退火引起的漏电流和负偏置照明应力的不稳定性的定量分析
机译:厚膜SOI MOSFET晶体管中的亚阈值电流
机译:通过脉冲激光沉积开发基于ZnO的薄膜晶体管和掺磷的ZnO和(Zn,Mg)O。
机译:A-Ingazno薄膜晶体管中光漏电流和负偏压照明应力的退火诱导稳定性的定量分析
机译:铟离子注入法分析ZnO薄膜晶体管的亚阈值光泄漏电流