Modeling local electrical fluctuations in 45 nm heavily pocket-implanted bulk MOSFET

摘要

Modeling local electrical fluctuations on pocket transistor is a challenging task, especially for relatively long gate transistors. Previous work highlighted and qualitatively explain the anomalously high random dopant induced increase of local fluctuations in rather long and heavily pocket device but could not accurately provide the amplitude of the phenomenon. In this paper, a new physical mismatch model is introduced. It is based on the three-transistor model, where one transistor is used to model the channel region and the other two for the pocket regions. This mismatch model provides both qualitative and quantitative mismatch results for all transistor gate lengths and furthermore, it is valid from weak to strong inversion regimes. After the model presentation, a detailed discussion of the qualitative results is performed. Afterwards, the experimental setup is presented. Finally, the physical parameters of the model are characterized and then the resulting level of fluctuations is shown to well model the experimental results.