Mechanical bending effect on the photo leakage currents characteristic of amorphous silicon thin film transistors

摘要

The photo leakage current (I_(PLC)) characteristic of a-Si:H TFTs under different bending strains has been studied. The larger J_(PLC)of a-Si:H TFTs under the outward bending strain is due to larger conductivity of a-Si:H, stemmed from the shift up of Fermi level (E_F). Experimental results show the J(PLC)of a-Si:H TFTs under the outward bending strain is larger than that of flattened and inward bending a-Si:H TFTs in the density of states (DOS) limited region, stemmed from the lower recombination centers present in outward bending a-Si:H material. Furthermore, the extracted smaller activity energy (E_a) of a-Si:H TFTs under the outward bending strain also confirmed the shift of E_F.