Sensitivity analysis of magnetic field sensors utilizing spin-dependent recombination in silicon diodes

摘要

An analysis of the magnetic field sensitivity that could be achieved in a sensor utilizing spin-dependent recombination (SDR) in silicon diodes is presented. Based on current theories of spin-dependent recombination and shot noise in diodes it is predicted that conventional silicon diodes may be used as detectors in a resonant magnetic field sensors with better than 3 μT resolution in a 1 Hz bandwidth - adequate for applications such as compassing, current sensing, position sensors and non-contact switches. A semiconductor device optimized for maximum SDR response will theoretically achieve a resolution on the order of 1 nT.