机译:比较和改进用于双栅极MOSFET的两种核心紧凑模型
TSRC, Institute of Microelectronics, School of Electronic Engineering and Computer Science, Peking University, Beijing 100871, PR China Key Laboratory of integrated Microsystems, School of Computer & Information Engineering, Peking University Shenzhen Graduate School, Shenzhen 518055, PR China Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, PR China;
rnKey Laboratory of integrated Microsystems, School of Computer & Information Engineering, Peking University Shenzhen Graduate School, Shenzhen 518055. PR China;
rnTSRC, Institute of Microelectronics, School of Electronic Engineering and Computer Science, Peking University, Beijing 100871, PR China;
rnTSRC, Institute of Microelectronics, School of Electronic Engineering and Computer Science, Peking University, Beijing 100871, PR China;
rnTSRC, Institute of Microelectronics, School of Electronic Engineering and Computer Science, Peking University, Beijing 100871, PR China;
rnTSRC, Institute of Microelectronics, School of Electronic Engineering and Computer Science, Peking University, Beijing 100871, PR China Key Laboratory of integrated Microsystems, School of Computer & Information Engineering, Peking University Shenzhen Graduate School, Shenzhen 518055, PR China;
rnTSRC, Institute of Microelectronics, School of Electronic Engineering and Computer Science, Peking University, Beijing 100871, PR China;
comparison; generic model; double-gate MOSFET; improvement;
机译:未掺杂双栅极SOI MOSFET的核心紧凑模型综述
机译:紧凑的漏电流模型,用于再现纳米级双栅Mosfets中的高级传输模型
机译:轻掺杂双栅极MOSFET中2D静电的分析紧凑建模框架
机译:独立驱动的双栅极MOSFET中漏极电流的紧凑模型
机译:双栅极MOSFET的紧凑模型。
机译:Sablik的简化方法模拟压制压力对软磁复合芯中磁滞回线形状的影响
机译:对称双栅MOSFET的紧凑模型,包括载流子限制和短沟道效应
机译:mOsFETs动态特性的紧凑建模