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Comparison and improvement of two core compact models for double-gate MOSFETs

机译:比较和改进用于双栅极MOSFET的两种核心紧凑模型

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摘要

In this paper, two present compact models for generic undoped double-gate (DG) MOSFETs are compared and discussed from aspects of formulations, advantages, prediction result, and computational efficiency. The models under comparison make fundamental contributions to generic DG MOSFET modeling. However, the applications of these models are hindered by their own drawbacks which are discussed in this work. The comparison results will provide a very useful reference and may benefit the future work for researchers to improve the development of double-gate MOSFET compact model. In addition, the calculation efficiency is extensively improved based on the Jacobian-Newton iterative method with a universal initial guess.
机译:在本文中,从公式,优点,预测结果和计算效率等方面比较和讨论了两种当前用于通用非掺杂双栅(DG)MOSFET的紧凑模型。进行比较的模型为通用DG MOSFET建模做出了基本贡献。但是,这些模型的应用由于其自身的缺点而受到阻碍,这些缺点将在本工作中进行讨论。比较结果将提供非常有用的参考,并可能有益于研究人员改善双栅MOSFET紧凑模型开发的未来工作。此外,基于具有通用初始猜测的Jacobian-Newton迭代方法,大大提高了计算效率。

著录项

  • 来源
    《Solid-State Electronics》 |2010年第11期|p.1444-1446|共3页
  • 作者单位

    TSRC, Institute of Microelectronics, School of Electronic Engineering and Computer Science, Peking University, Beijing 100871, PR China Key Laboratory of integrated Microsystems, School of Computer & Information Engineering, Peking University Shenzhen Graduate School, Shenzhen 518055, PR China Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, PR China;

    rnKey Laboratory of integrated Microsystems, School of Computer & Information Engineering, Peking University Shenzhen Graduate School, Shenzhen 518055. PR China;

    rnTSRC, Institute of Microelectronics, School of Electronic Engineering and Computer Science, Peking University, Beijing 100871, PR China;

    rnTSRC, Institute of Microelectronics, School of Electronic Engineering and Computer Science, Peking University, Beijing 100871, PR China;

    rnTSRC, Institute of Microelectronics, School of Electronic Engineering and Computer Science, Peking University, Beijing 100871, PR China;

    rnTSRC, Institute of Microelectronics, School of Electronic Engineering and Computer Science, Peking University, Beijing 100871, PR China Key Laboratory of integrated Microsystems, School of Computer & Information Engineering, Peking University Shenzhen Graduate School, Shenzhen 518055, PR China;

    rnTSRC, Institute of Microelectronics, School of Electronic Engineering and Computer Science, Peking University, Beijing 100871, PR China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    comparison; generic model; double-gate MOSFET; improvement;

    机译:比较通用模型双栅极MOSFET;改善;
  • 入库时间 2022-08-18 01:35:00

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