机译:以热氧化的Ni / Ti作为栅极绝缘体的高击穿AlGaN / GaN MOSHEMT
Institute of Microelectronics, Peking University, Beijing 100871, China;
rnInstitute of Microelectronics, Peking University, Beijing 100871, China;
rnInstitute of Microelectronics, Peking University, Beijing 100871, China;
rnInstitute of Microelectronics, Peking University, Beijing 100871, China;
rnInstitute of Microelectronics, Peking University, Beijing 100871, China;
rnInstitute of Microelectronics, Peking University, Beijing 100871, China;
rnInstitute of Microelectronics, Peking University, Beijing 100871, China;
rnState Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;
rnState Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;
rnInstitute of Microelectronics, Peking University, Beijing 100871, China;
AlGaN/GaN; MOSHEMT; Ni/Ti; breakdown voltage; stability;
机译:使用热氧化的Al-Ti作为栅极绝缘体的高击穿电压AlGaN / GaN MOSHEMT
机译:使用亚微米级印迹热氧化$ {rm TiO} _ {2} $ / NiO作为栅介质,低漏电流和高截止频率AlGaN / GaN MOSHEMT
机译:以氧化镍为栅绝缘体的AlGaN / GaN金属氧化物半导体异质结构场效应晶体管
机译:TiO_2 / Al_2O_3栅介质的高击穿电压AlGaN / GaN MOSHEMT的仿真与分析
机译:研究常关模式的AlGaN / GaN MOS HEMT器件,该器件利用栅极后退和p-GaN栅极结构以及带有醛生长的高k栅极绝缘体来实现高功率应用。
机译:氧等离子体处理对采用PECVD SiO2栅极绝缘体的原位SiN / AlGaN / GaN MOSHEMT的影响
机译:多通道三门正常开/关AlGaN / GaN MOSHEMTS在SI基板上具有高击穿电压和低电阻低
机译:自对准aLD alOx T栅极绝缘体,用于siNx钝化alGaN / GaN HEmT中的栅极漏电流抑制