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An analytical model for square GAA MOSFETs including quantum effects

机译:包含量子效应的方形GAA MOSFET的分析模型

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摘要

In this paper we introduce an analytical model for square Gate-Ail-Around (GAA) MOSFETs including quantum effects. With the model developed, it is possible to provide an analytical description of the 2D inversion charge distribution function (ICDF) in square GAA MOSFETs of different sizes and for all the operational regimes. The accuracy of the model is verified by comparing the data with that obtained by means of a 2D numerical simulator that self-consistently solves the Poisson and Schrodinger equations. The expressions presented here are useful to achieve a good description of the physics of these transistors: in particular, of the quantization effects on the inversion charge. The analytical ICDF obtained is used to calculate important parameters from the device compact modeling viewpoint, such as the inversion charge centroid and the gate-to-channel capacitance, which are modeled for different device geometries and biases. The model presented accurately reproduces the simulation results for the devices under study and for different operational regimes.
机译:在本文中,我们介绍了包含量子效应的方栅-圆环(GAA)MOSFET的分析模型。利用开发的模型,可以对不同尺寸的方形GAA MOSFET中的2D反转电荷分布函数(ICDF)进行分析描述,并适用于所有工作方式。通过将数据与使用二维数值模拟器获得的数据进行比较来验证模型的准确性,该二维数值模拟器可以自洽地求解Poisson和Schrodinger方程。此处提供的表达式可用于很好地描述这些晶体管的物理特性:尤其是对反转电荷的量化影响。从器件紧凑的建模角度来看,获得的分析式ICDF用于计算重要参数,例如针对不同的器件几何形状和偏置建模的反型电荷质心和栅极至沟道电容。所呈现的模型可以准确地再现所研究设备和不同操作方案的仿真结果。

著录项

  • 来源
    《Solid-State Electronics》 |2010年第11期|p.1463-1469|共7页
  • 作者单位

    Dpto. de Electrdnica y Tecnologia de los Computadores, Facultad de Ciencias, Universidad de Granada, 18071 Granada, Spain;

    rnDpto. de Electrdnica y Tecnologia de los Computadores, Facultad de Ciencias, Universidad de Granada, 18071 Granada, Spain;

    rnDpto. de Electrdnica y Tecnologia de los Computadores, Facultad de Ciencias, Universidad de Granada, 18071 Granada, Spain;

    rnDpro. de Matematica Aplicada, Facultad de Ciencias, Universidad de Granada, 18071 Granada, Spain;

    rnDpto. De Electrdnica y Tecnologia de los Computadores, Facultad de Ciencias, Universidad de Granada, 18071 Granada, Spain;

    rnDpto. De Electrdnica y Tecnologia de los Computadores, Facultad de Ciencias, Universidad de Granada, 18071 Granada, Spain;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    gate-all-around MOSFET; quantum mechanical effects; inversion charge modeling; inversion charge centroid; charge confinement; gate-to-channel capacitance;

    机译:环绕栅MOSFET;量子力学效应反演电荷建模;反转电荷质心充电禁闭;门到通道电容;
  • 入库时间 2022-08-18 01:34:59

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