Analysis of transient behavior of AlGaN/GaN MOSHFET

摘要

The threshold voltage of HfO_2/AlGaN/GaN MOSHFETs was dependent on the time after the bias stress and the transconductance decreased at large gate voltages. These behaviors were explained based on the two-dimensional device simulation assuming three trap levels of E_C - E_T=0.4,0.765,1.65 eV with short, medium and long time constants at the HfO_2/AlGaN interface, which were obtained based on the analytical consideration of the experimental results.