机译:具有不同铟组成的a面InGaN / GaN量子阱结构的非极性生长和表征
Department of Physics and Research Institute for Natural Sciences, Hanyang University, Seoul 133-791, Republic of Korea Green Energy Research Center, Korea Electronics Technology Institute, Cyeonggi 463-816, Republic of Korea;
Department of Physics and Research Institute for Natural Sciences, Hanyang University, Seoul 133-791, Republic of Korea;
Department of Physics and Research Institute for Natural Sciences, Hanyang University, Seoul 133-791, Republic of Korea;
Green Energy Research Center, Korea Electronics Technology Institute, Cyeonggi 463-816, Republic of Korea;
Green Energy Research Center, Korea Electronics Technology Institute, Cyeonggi 463-816, Republic of Korea;
Green Energy Research Center, Korea Electronics Technology Institute, Cyeonggi 463-816, Republic of Korea;
Green Energy Research Center, Korea Electronics Technology Institute, Cyeonggi 463-816, Republic of Korea;
MOCVD; nitride semiconductor; nonpolar growth; quantum wells;
机译:具有不同铟组成的a平面和c平面InGaN / GaN多量子阱的内部量子效率行为
机译:在横向外延生长的a面GaN上生长的非极性a面InGaN / GaN多量子阱的性质
机译:具有不同铟成分的r面蓝宝石衬底上的a面InGaN / GaN多量子阱的光学性质
机译:用不同铟组分的平面和C面Ingan / GaN多量子的内部量子效率行为
机译:硒化锌镉/硒化锌镉镁-磷化铟量子级联结构的分子束外延生长和表征,可在3-5 um范围内操作。
机译:梯度铟成分p型InGaN层增强GaN基绿色发光二极管的量子效率
机译:绿色发光Ingan / GaN量子阱中的微观结构,局部铟组分和光致发光
机译:用于激光二极管应用的GaN,InGaN和GaN / InGaN量子阱结构的mBE生长和性质