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Nonpolar growth and characterization of a-plane InGaN/GaN quantum well structures with different indium compositions

机译:具有不同铟组成的a面InGaN / GaN量子阱结构的非极性生长和表征

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摘要

Characteristics of nonpolar (11-2 0) a-plane GaN template on r-plane sapphire substrate and subsequently grown InGaN/GaN quantum well (QW) structures were investigated. The crystal orientation and the defect evolution behavior in a-plane GaN template were confirmed by using selected area diffraction and transmittance electron microscopy. The values of full width at half maximum (FWHM) of (1 1-2 0) X-ray rocking curves along the c- and m-directions were 415 and 595 arcsec respectively. The optical characteristics of a-plane InGaN/GaN QW samples with different indium compositions were intensively studied by using temperature-dependent photoluminescence (PL) spectra. The thermal activation energy for localized states increased from 26.5 to 41 meV with increase of indium compositions. Also their relative PL efficiencies and FWHM values showed a potential for nonpolar-based light emitters.
机译:研究了r面蓝宝石衬底上的非极性(11-2 0)a面GaN模板以及随后生长的InGaN / GaN量子阱(QW)结构的特性。通过选择区域衍射和透射电子显微镜,证实了a面GaN模板中的晶体取向和缺陷演变行为。沿c方向和m方向的(1 1-2 0)X射线摇摆曲线的半峰全宽(FWHM)值分别为415和595 arcsec。通过使用随温度变化的光致发光(PL)光谱,深入研究了具有不同铟成分的a面InGaN / GaN QW样品的光学特性。随着铟组成的增加,局部状态的热活化能从26.5meV增加到41meV。同样,它们的相对PL效率和FWHM值也显示出基于非极性发光体的潜力。

著录项

  • 来源
    《Solid-State Electronics》 |2010年第10期|P.1221-1226|共6页
  • 作者单位

    Department of Physics and Research Institute for Natural Sciences, Hanyang University, Seoul 133-791, Republic of Korea Green Energy Research Center, Korea Electronics Technology Institute, Cyeonggi 463-816, Republic of Korea;

    Department of Physics and Research Institute for Natural Sciences, Hanyang University, Seoul 133-791, Republic of Korea;

    Department of Physics and Research Institute for Natural Sciences, Hanyang University, Seoul 133-791, Republic of Korea;

    Green Energy Research Center, Korea Electronics Technology Institute, Cyeonggi 463-816, Republic of Korea;

    Green Energy Research Center, Korea Electronics Technology Institute, Cyeonggi 463-816, Republic of Korea;

    Green Energy Research Center, Korea Electronics Technology Institute, Cyeonggi 463-816, Republic of Korea;

    Green Energy Research Center, Korea Electronics Technology Institute, Cyeonggi 463-816, Republic of Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    MOCVD; nitride semiconductor; nonpolar growth; quantum wells;

    机译:MOCVD;氮化物半导体非极性增长;量子阱;
  • 入库时间 2022-08-18 01:34:57

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