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Ultra-high aspect-ratio FinFET technology

机译:超高纵横比FinFET技术

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摘要

FinFETs with ultra-large height-to-width ratio have been processed on (110) bulk silicon wafers by employing crystallographic etching of silicon with TMAH, which results in nearly vertical sidewalls with a (111)/(112) surface orientation. Tall fins, which corresponds to wide transistor channels per single fin offer more efficient use of the silicon area and improved performance for multi-fin devices in high-frequency analog applications. N-channel FinFETs with 1.9-nm-wide fins demonstrate the downscaling potential of the technology and devices with a height of the active part of the fin of 625 nm have the largest aspect-ratio of the fins reported thus far. Both devices with highly and moderately scaled fin-widths exhibit excellent subthreshold performance while electrons have higher mobility in 15-nm-wide FinFETs, which gives them larger on-state currents. The comparison between FinFETs and wide tri-gate devices shows that FinFETs have better current drivability in this simple process, even with larger source/drain series resistances. The differences in threshold voltage and low-field electron mobility between 1.9-nm-wide and 15-nm-wide FinFETs have been related to the increase in subband energies due to carrier confinement in the extremely narrow fins.
机译:通过使用TMAH对硅进行晶体学蚀刻,已经在(110)块状硅晶片上加工了具有超高高宽比的FinFET,这将导致侧壁几乎垂直,表面取向为(111)/(112)。高鳍片(对应于每个单鳍片的宽晶体管通道)可更有效地利用硅面积,并提高高频模拟应用中多鳍片器件的性能。具有1.9 nm宽鳍片的N通道FinFET证明了该技术的缩小潜力,而鳍片有源部分高度为625 nm的器件具有迄今为止报道的鳍片最大的纵横比。这两种具有高和中等比例的鳍片宽度的器件都具有出色的亚阈值性能,而电子在15nm宽的FinFET中具有更高的迁移率,这使它们具有更大的导通电流。 FinFET和宽三栅器件之间的比较表明,即使具有较大的源极/漏极串联电阻,FinFET在这种简单的过程中仍具有更好的电流驱动性。宽度在1.9nm和15nm的FinFET之间的阈值电压和低场电子迁移率的差异与由于极窄鳍中的载流子限制而导致的子带能量的增加有关。

著录项

  • 来源
    《Solid-State Electronics》 |2010年第9期|P.870-876|共7页
  • 作者单位

    Department of Electronics, Microelectronics, Computing and Intelligent Systems, Faculty of Electrical Engineering and Computing, University of Zagreb, Unska 3, HR-10000 Zagreb, Croatia ECTM-DIMES, Delft University of Technology, The Netherlands;

    rnDepartment of Electronics, Microelectronics, Computing and Intelligent Systems, Faculty of Electrical Engineering and Computing, University of Zagreb, Unska 3, HR-10000 Zagreb, Croatia;

    rnDepartment of Electronics, Microelectronics, Computing and Intelligent Systems, Faculty of Electrical Engineering and Computing, University of Zagreb, Unska 3, HR-10000 Zagreb, Croatia;

    rnECTM-DIMES, Delft University of Technology, The Netherlands;

    rnECTM-DIMES, Delft University of Technology, The Netherlands;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    CMOS; FinFET; TMAH; (111) channel; carrier confinement;

    机译:CMOS;FinFET;TMAH;(111)个频道;承运人限制;
  • 入库时间 2022-08-18 01:34:57

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