Large-signal model for AlGaN/GaN HEMTs suitable for RF switching-mode power amplifiers design

摘要

A table-based large-signal model for GaN HEMT transistor suitable for designing switching-mode power amplifiers (SMPAs) is presented along with its parameters extraction procedure. This model is relatively easy to construct and implement in CAD software since it requires only DC and S-parameter measurements. The intrinsic drain and gate currents are described as a table-based to provide an accurate prediction for the device in the switching states as well as the transition one. The modeling procedure was applied to a 4-W packaged GaN-on-Si HEMT. The model is validated by comparing its small- and large-signal simulation to measured data. The model has been employed for designing a switching-mode inverse class-F power amplifier. Very good agreement between the amplifier simulation and measurement shows the validity of the model.