Extracting the Schottky barrier height from axial contacts to semiconductor nanowires

摘要

Geometrical and surface effects can significantly alter conduction through metal/semiconductor nano-wire (NW) contacts. In this study, we use three dimensional device simulations to examine these effects in detail. Based on the results of these simulations, a methodology is proposed for the extraction of Schottky barrier heights of contacts to semiconductor nanowires. The Schottky barrier height extracted from the current-voltage (I-V) characteristics can differ from the true barrier height due to tunneling contributions localized at the metalanowire interface along the nanowire periphery. The outlined method is used to analyze experimental I-V characteristics of a surround-gate axially-aligned θ-Ni_2Si-Si nanowire Schottky barrier contact.