机译:具有多个Mg_xN_y / GaN缓冲层的氮化物基蓝色发光二极管
Department of Optics and Photonics, National Central University, Jhong-Li 320, Taiwan;
Department of Optics and Photonics, National Central University, Jhong-Li 320, Taiwan;
National Synchrotron Radiation Research Center, Hsinchu Science Park, Hsinchu 30076, Taiwan;
Department of Optics and Photonics, National Central University, Jhong-Li 320, Taiwan;
dislocation; multiple Mg_xN_y-GaN buffer layers; light-emitting diodes; nitride; metalorganic chemical vapor deposition;
机译:通过使用多个Mg_xN_y / GaN成核层减少氮化物基肖特基二极管的位错
机译:金属有机化学气相沉积法在具有多个Mg_xN_y / GaN缓冲层的GaN中进行位错ni没
机译:通过金属有机化学气相沉积减少具有多个Mg_xN_y / GaN缓冲层的GaN中的位错
机译:具有纳米球层的基于GaN的蓝色GaN发光二极管的改进
机译:氮化镓基蓝色发光二极管的设计,制造和表征。
机译:GaN / AlGaN /溅射AlN成核层对GaN基紫外发光二极管性能的影响
机译:在纳米孔GaN层上生长的IngaN / GaN多量子孔发光二极管的增强性能