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Detailed study about influence of oxygen on trap properties in SiO_xN_y by the thermally stimulated current and maximum entropy method

机译:用热激电流和最大熵方法研究氧对SiO_xN_y中陷阱性质的影响

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摘要

The trap amount depending on trap energy levels [N_t(E_t)] in various silicon oxynitride films were investigated. Using the thermally stimulated current and the maximum entropy method, we determined N_t(E_t) with very high energy resolution. In N_t(E_t), many Et were observed between 1.2 and 1.6 eV. Interestingly, their amounts significantly depended on the film compositions. The influence of oxygen on N_t(E_t) is also discussed.
机译:研究了各种氧氮化硅膜中取决于陷阱能级[N_t(E_t)]的陷阱量。使用热激励电流和最大熵方法,我们确定了具有很高能量分辨率的N_t(E_t)。在N_t(E_t)中,在1.2和1.6 eV之间观察到许多Et。有趣的是,它们的量明显取决于薄膜的组成。还讨论了氧对N_t(E_t)的影响。

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